A Physics-Based InP/InGaAs SHBT Model for SPICE simulation
| Paper File | Download Paper File | | Appear In | 2007 4th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON 2007) | | Publication Date | 09/05/2007 - 12/05/2007 | | Volume | | | Pages | 133 - 136 | | Author 1 | Suchat Osaklang | | Author 2 | Chiranut Sa-ngiamsak |
Abstract
A physics-based, large-signal SPICE model for an
abrupt-junction uniform-base InP/InGaAs SHBT is reported.
This work was developed from the physics-based model for
AlGaAs/GaAs SHBT. The SPICE parameters for this model are
directly and automatically calculated from the transistor profile.
A specific InP/InGaAs SHBT was studied. The simulations of the
IV characteristics were compared with the measurements. The
results show a good agreement between this work and the
measurements. The comparison between the DC characteristics of
InP-based HBT and of GaAs-based HBT demonstrates better
suitability of this model to InP-based HBT due to the reduction of
a deviation of the VCE offset voltage (DVCE offset). That of InPbased
and GaAs-based SHBTS are ~0.16V and ~0.30 V,
respectively. |
